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    Low-oxygen Monocrystal ingot Puller
     
    SCEC Third Generation Monocrystal ingot Puller: Low-oxygen Monocrystal ingot Puller can melt the silicon via the graphite heater in an inert atmosphere (Argon, Nitrogen) and then grow dislocation-free monocrystal silicon ingot through CZ method automatically.
    • 10”Rod

      170+kg/d

    • 12”Rod

      185+kg/d

    Oxygen content reduced by 40% 
    The unique oxygen content reduction solution of SCEC can effectively reduce the oxygen
    content in Mono-Si ingot by 40% and improve the efficiency of N-type 210 cells by 0.1%-0.2%

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